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High-resolution scanning capacitance microscopy by angle bevelling

✍ Scribed by Filippo Giannazzo; Vito Raineri; Vittorio Privitera; Francesco Priolo

Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 141 KB
Volume: 4
Category: Article
ISSN: 1369-8001
DOI: 10.1016/s1369-8001(00)00171-2

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✦ Synopsis

Scanning capacitance microscopy was performed on bevelled samples to improve the resolution. The dependence of the reverse junction carrier spilling on the bevel angle has been investigated for P and B ion-implanted Si samples. We show an increase of this effect decreasing the bevel angle from 5844 0 to 189 0 . Moreover, the depletion region amplitude measured on the bevelled surface is narrower than on the cross section. We have also studied the spilling dependence on the dopant profile shape and we have found that it increases with the profile slope decreasing in the low concentration region near the junction.

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