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Lanthanum germanate as dielectric for scaled Germanium metal–oxide–semiconductor devices

✍ Scribed by C. Andersson; C. Rossel; M. Sousa; D.J. Webb; C. Marchiori; D. Caimi; H. Siegwart; Y. Panayiotatos; A. Dimoulas; J. Fompeyrine

No coin nor oath required. For personal study only.

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