Investigation of strain-relaxed SiGe thi
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Changchun Chen; Benhai Yu; Jiangfeng Liu; Jianqing Cao; Dezhang Zhu; Zhihong Liu
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Article
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2005
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Elsevier Science
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English
β 347 KB
Si 1Γx Ge x thin films on the Ar + ion-implanted Si substrates with different implantation energy (30 keV, 40 keV and 60 keV) at the same implantation fluence (3 β’ 10 15 cm Γ2 ) were grown by ultra high vacuum chemical vapor deposition (UHVCVD). Various characterization technologies were used to cha