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Kinetics of solid phase regrowth of self-ion-implanted amorphous SiC during low temperature furnace annealing

✍ Scribed by O. Eryu; K. Abe; K. Nakashima; H. Harima


Book ID
114167234
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
165 KB
Volume
206
Category
Article
ISSN
0168-583X

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Solid phase epitaxial regrowth of amorph
✍ S. Ruffell; I.V. Mitchell; P.J. Simpson 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 210 KB

Medium energy ion scattering (MEIS) has been used to study the kinetics of solid phase epitaxial regrowth (SPEG) of ultrathin amorphous layers created by room temperature implantation of 5 keV energy phosphorus ions into Si(1 0 0). P ion fluences ranged from 5e14 cm À2 up to 1e16 cm À2 , the associa