Low temperature annealing of B and P ions incorporated into deposited- and self-implanted amorphous Si

✍ Scribed by Hiroshi Ishiwara; Kiyomi Naruke; Seijiro Furukawa

• Publisher: Elsevier Science
• Year: 1983
• Weight: 338 KB
• Volume: 209-210
• Category: Article
• ISSN: 0167-5087
• DOI: 10.1016/0167-5087(83)90868-2