Kinetics of ion-beam mixing at Ti-Si interfaces
β Scribed by I. J. Jabr; N. S. Saleh; K. A. Al-Saleh
- Publisher
- Springer US
- Year
- 1990
- Tongue
- English
- Weight
- 545 KB
- Volume
- 1
- Category
- Article
- ISSN
- 0957-4522
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Ta/Si interfaces were systematically studied concerning ion beam mixing effects. Tantalum was evaporated on silicon of (1 0 0) and (1 1 1) orientation using the molecular beam epitaxy (MBE) method. The samples were then irradiated with 1.85 MeV and 6 MeV Ar, 90 keV O and 90 keV C. Rutherford backsca
## Abstract An Xβray Si __L__~2,3~βemission spectroscopy study of a SiO~2~/nβSi heterostructure containing a thin oxide layer of __d__β=β20βnm thickness implanted by Si^+^ ions with an energy 12βkeV is reported. The maximum concentration of implanted Si^+^ ions is located close to the SiO~2~βSi int