Ion Beam Mixing of Ag/Si Bilayer
β Scribed by Masoud, N. M. ;Arafah, D.-E.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 226 KB
- Volume
- 172
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
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Dedicated to Professor Dr. Wolfgang Schro Γ ter on the occasion of his 65th anniversary Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe ions to fluences of (0.5Β±2) Γ 10 16 ions/cm 2 at temperatures between room temperature and 400 C. By means of Rutherford Backscatter
Ta/Si interfaces were systematically studied concerning ion beam mixing effects. Tantalum was evaporated on silicon of (1 0 0) and (1 1 1) orientation using the molecular beam epitaxy (MBE) method. The samples were then irradiated with 1.85 MeV and 6 MeV Ar, 90 keV O and 90 keV C. Rutherford backsca