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Kinetics of grain growth in doped polycrystalline silicon thin films

โœ Scribed by S. Kalainathan; R. Dhanasekaran; P. Ramasamy


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
176 KB
Volume
163
Category
Article
ISSN
0040-6090

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๐Ÿ“œ SIMILAR VOLUMES


Kinetics of thermal growth of thin silic
โœ G.C. Sarti; F. Santarelli; G. Camera Roda ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 727 KB

thermal growth of dry SiOs layers is usually described by the so-called linear parabolic equation, based on the assumption that oxygen diffusion takes place in the oxide layer according to Fick's law with constant dilfusivity, and that the oxidation occurs at the Si-Si02 interface with a first-order