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Chemically induced grain boundary migration in doped polycrystalline silicon films

โœ Scribed by K.N. Tu; J. Tersoff; T.C. Chou; C.Y. Wong


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
466 KB
Volume
66
Category
Article
ISSN
0038-1098

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Dopant Distribution in Grain-Boundary Films in Calcia-Doped Silicon Nitride Ceramics. -Ca segregation to grain boundaries in a systematically Ca-doped Si 3 N 4 system is uniform along and across each grain boundary film. The segregation in the films saturates at a rather low level and the excess Ca