๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Kinetics of complex defect annealing in silicon

โœ Scribed by P.H. Fang


Publisher
Elsevier Science
Year
1967
Tongue
English
Weight
131 KB
Volume
24
Category
Article
ISSN
0375-9601

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Defect production and annealing in ion i
โœ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron

Defect and dopant kinetics in laser anne
โœ A. La Magna; G. Fisicaro; G. Mannino; V. Privitera; G. Piccitto; B.G. Svensson; ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 317 KB