Kinetical study of the nonstoichiometric vapour growth process in the system ZnSe:I2

✍ Scribed by A. Stanculescu

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 550 KB
• Volume: 45
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.201000059

✦ Synopsis

Abstract

We have studied the growth of ZnSe crystals by chemical transport in a closed system in nonstoichiometric conditions, and we have deduced that the interface kinetics is the phenomenon limiting the growth process. The effect on the growth process of the deviation from stoichiometry of the II‐VI compound was investigated using a mathematical model that involves indirect data computed from directly obtained experimental values. The experimental crystallization rate was compared with the maximum value of the transport flux calculated using the Arizumi‐Nishinaga model. The influence of the stoichiometry of the source material and of the variations in the growth parameters (supercooling, geometrical dimension, specific loading of the ampoule and iodine concentration) on the ZnSe crystal growth process has also been studied. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)