(Keynote) History and Future Directions in SiGe HBT BiCMOS Technology and Its Applications
โ Scribed by Harame, D.; Joseph, A.; Cheng, P.; Jain, V.; Camillo-Castillo, R.
- Book ID
- 115544832
- Publisher
- The Electrochemical Society
- Year
- 2012
- Tongue
- English
- Weight
- 453 KB
- Volume
- 49
- Category
- Article
- ISSN
- 1938-6737
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
## Abstract This letter presents a 77โGHz power amplifier implemented in a SiGe BiCMOS technology featuring bipolar transistors with 160/175โGHz __f__~T~/__f__~max~. The circuit adopts a two stage differential topology with integrated input/output matching networks. The amplifier performance is con
This Text On Bipolar And Bicmos Circuits And Technology Covers: Design; Performance; Fabrication; Testing; Application; Integrated Circuits; Phenomena; Discrete Devices; Radio Frequency Design; Innovative Packaging; Device Physics, Modelling And Simulation; Cad Tools; And Power Devices And Ics.