## Abstract A fully matched Ka‐band wideband pseudomorphic high‐electron‐mobility transistor (PHEMT) 1‐W monolithic millimeter‐wave integrated circuit (MMIC) high‐power amplifier (HPA) without any external circuit is developed. The two‐stage HPAs are prepared on 2‐mil GaAs substrates with a small c
Ka-band high-power and driver MMIC amplifiers using GaAs PHEMTs and coplanar waveguides
✍ Scribed by Bessemoulin, A.; Massler, H.; Hulsmann, A.; Schlechtweg, M.
- Book ID
- 114561961
- Publisher
- IEEE
- Year
- 2000
- Tongue
- English
- Weight
- 108 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1051-8207
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