A planar p-n junction with near ideal br
โ
Sujata Jog; V.P. Sundar Singh
๐
Article
๐
1988
๐
Elsevier Science
๐
English
โ 279 KB
MOSFETs are increasingly used as power devices and an important requirement of such a device is its ability to withstand high voltage. Since many MOS transistors have planar configuration, it is essential that the actual breakdown voltage of a planar junction is made to reach the bulk breakdown volt