A planar p-n junction with near ideal breakdown voltage

✍ Scribed by Sujata Jog; V.P. Sundar Singh

• Book ID: 104157717
• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 279 KB
• Volume: 19
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(88)80184-8

✦ Synopsis

MOSFETs are increasingly used as power devices and an important requirement of such a device is its ability to withstand high voltage. Since many MOS transistors have planar configuration, it is essential that the actual breakdown voltage of a planar junction is made to reach the bulk breakdown voltage. In this paper, by using concentration profiling, a breakdown voltage of 91% of the bulk breakdown value is achieved. Numerical techniques were adopted to evaluate the field and the multiplication factor in the junction. The superiority of the method lies in its simplicity.