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A substrate etch geometry for near ideal breakdown voltage in p-n junction devices

โœ Scribed by Temple, V.A.K.; Adler, M.S.


Book ID
114592486
Publisher
IEEE
Year
1977
Tongue
English
Weight
572 KB
Volume
24
Category
Article
ISSN
0018-9383

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A planar p-n junction with near ideal br
โœ Sujata Jog; V.P. Sundar Singh ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 279 KB

MOSFETs are increasingly used as power devices and an important requirement of such a device is its ability to withstand high voltage. Since many MOS transistors have planar configuration, it is essential that the actual breakdown voltage of a planar junction is made to reach the bulk breakdown volt