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Junction Passivation for Direct Silicon Bond Hybrid Orientation Technology

โœ Scribed by Joshi, S.; Pinto, A.; Huang, Y.-T.; Wise, R.; Cleavelin, R.; Seacrist, M.; Ries, M.; Ramin, M.; Freeman, M.; Nguyen, B.; Matthews, K.; Wilks, B.; Denning, L.; Johnson, C.; Bennet, J.; Ma, M.; Lin, C.-T.; Banerjee, S.K.


Book ID
114618838
Publisher
IEEE
Year
2007
Tongue
English
Weight
626 KB
Volume
54
Category
Article
ISSN
0018-9383

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Passivation of hybrid-orientation direct
โœ Magnus C. Wagener; Mike Seacrist; George A. Rozgonyi ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 279 KB

This paper reports on the effect hydrogenation has on the electrical properties of hybrid-orientation (1 1 0)/(1 0 0) direct silicon bonded interfaces. Temperature-dependent capacitance measurements and deep-level transient spectroscopy were used to evaluate the distribution of interface states foll