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Fully depleted silicon on insulator MOSFETs on (1 1 0) surface for hybrid orientation technologies

✍ Scribed by T. Signamarcheix; F. Andrieu; B. Biasse; M. Cassé; A.-M. Papon; E. Nolot; B. Ghyselen; O. Faynot; L. Clavelier

No coin nor oath required. For personal study only.

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Fully depleted silicon on insulator MOSFETs on (1&#xa0;1&#xa0;0) surface for hybrid orientation technologies