manufacturing and technology requirements outlined in the semiconductor industry technology roadmap for interconnect technologies." With improved planarization versus traditional coating methods, the Fairchild process solution is an excellent complement to CMP. By reducing deposition time, polishing
โฆ LIBER โฆ
JPSA offers 300mm silicon wafer singulation capability
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 40 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0961-1290
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
Surface interface's 300 mm wafer capabil
๐
Article
๐
1997
๐
Elsevier Science
๐
English
โ 159 KB
A study on surface grinding of 300 mm si
โ
Z.J Pei
๐
Article
๐
2002
๐
Elsevier Science
๐
English
โ 175 KB
Most of today's IC chips are made from 200 mm or 150 mm silicon wafers. It is estimated that the transition from 200 mm to 300 mm wafers will bring a die cost saving of 30-40%. To meet their customers' needs, silicon wafer manufacturers are actively searching for cost-effective ways to manufacture 3
Impact of filtering on nanotopography me
โ
F Riedel; H.-A Gerber; P Wagner
๐
Article
๐
2002
๐
Elsevier Science
๐
English
โ 299 KB
In-line monitoring of 300 mm silicon epi
โ
E. Kamieniecki; T. Bickl; J. Tower
๐
Article
๐
1999
๐
Elsevier Science
๐
English
โ 612 KB
Comparison of silicon epitaxial growth o
โ
A.S. Segal; A.O. Galyukov; A.V. Kondratyev; A.P. Sidโko; S.Yu. Karpov; Yu.N. Mak
๐
Article
๐
2001
๐
Elsevier Science
๐
English
โ 916 KB
A detailed modeling of CVD of silicon epilayers from trichlorosilane (TCS) on the 200-and 300-mm wafers in the Centura reactors is carried out using a quasi-thermodynamic model of surface kinetics. The flow patterns, the temperature and species distributions in the reactors, and the growth rate dist