Comparison of silicon epitaxial growth on the 200- and 300-mm wafers from trichlorosilane in Centura reactors
✍ Scribed by A.S. Segal; A.O. Galyukov; A.V. Kondratyev; A.P. Sid’ko; S.Yu. Karpov; Yu.N. Makarov; W. Siebert; P. Storck
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 916 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
A detailed modeling of CVD of silicon epilayers from trichlorosilane (TCS) on the 200-and 300-mm wafers in the Centura reactors is carried out using a quasi-thermodynamic model of surface kinetics. The flow patterns, the temperature and species distributions in the reactors, and the growth rate distributions over the wafers are studied. The growth rate distribution over the 300-mm wafer is shown to be less uniform and symmetric compared to that over the 200-mm wafer under typical growth conditions. An essential smoothing effect of the susceptor rotation and of a higher flow rate is revealed and found to be much stronger for the 300-mm wafer.