𝔖 Bobbio Scriptorium

✦ LIBER ✦

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Three-dimensional simulation of ion implantation

✍ Scribed by Lorenz, J.; Tietzel, K.; Bourenkov, A.; Ryssel, H.

Book ID: 120255357
Publisher: Japan Soc. Appl. Phys
Year: 1996
Weight: 254 KB
Category: Article
ISBN-13: 9780780327450
DOI: 10.1109/SISPAD.1996.865255

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📜 SIMILAR VOLUMES

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Simulation environment for semiconductor technology analysis

✍ Pichler, Ch.; Plasun, R.; Strasser, R.; Selberherr, S. 📂 Article 📅 1996 🏛 Japan Soc. Appl. Phys ⚖ 219 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Inverse modeling profile determination: implementation issues and recent results

✍ Khalil, N.; Faricelli, J. 📂 Article 📅 1996 🏛 Japan Soc. Appl. Phys ⚖ 285 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Two-dimensional simulation of surface-state effects on slow current transients in GaAs MESFETs

✍ Yamada, T.; Horio, K. 📂 Article 📅 1996 🏛 Japan Soc. Appl. Phys 🌐 English ⚖ 208 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Processes and Devices - Tokyo, Japan (2-4 Sept. 1996)] 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) - Robust simulation for the hysteresis phenomena of SOI MOSFET's by quasi-transient method

✍ Ikeno, R.; Asada, K. 📂 Article 📅 1996 🏛 Japan Soc. Appl. Phys ⚖ 157 KB

[Japan Soc. Appl. Phys 2002 Internationa

[Japan Soc. Appl. Phys 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002) - Kobe, Japan (4-6 Sept. 2002)] International Conferencre on Simulation of Semiconductor Processes and Devices - Self-consistent single-particle simulation

✍ Bufler, F.M.; Zechner, C.; Schenk, A.; Fichtner, W. 📂 Article 📅 2002 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 263 KB

[Japan Soc. Appl. Phys International Con

[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Interconnect modeling for VLSIs

✍ Soo-Young Oh, ; Won-Young Jung, ; Jeong-Taek Kong, ; Keun-Ho Lee, 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 385 KB