𝔖 Bobbio Scriptorium

✦ LIBER ✦

[Japan Soc. Appl. Phys 1999 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (14-16 June 1999)] 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) - A new 1T/2C merged two-terminal gain cell with SBT encapsulated floating gate MOSFET for highly scalable FeRAM

✍ Scribed by Aoki, M.; Mushiga, M.; Itoh, A.; Eshita, T.; Arimoto, Y.

Book ID: 127091341
Publisher: Japan Soc. Appl. Phys
Year: 1999
Tongue: Japanese
Weight: 153 KB
Category: Article
ISBN-13: 9784930813930
DOI: 10.1109/vlsit.1999.799385

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[Japan Soc. Appl. Phys 1999 Symposium on

[Japan Soc. Appl. Phys 1999 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (14-16 June 1999)] 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) - Compact distributed RLC models for multilevel interconnect networks

✍ Davis, J.A.; Meindl, J.D. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 158 KB

[Japan Soc. Appl. Phys 1999 Symposium on

[Japan Soc. Appl. Phys 1999 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (14-16 June 1999)] 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) - Submicron CMOS thermal noise modeling from an RF perspective

✍ Ou, J.J.; Xiaodong Jin, ; Chenming Hu, ; Gray, P.R. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 141 KB

[Japan Soc. Appl. Phys 1999 Symposium on

[Japan Soc. Appl. Phys 1999 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (14-16 June 1999)] 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) - Enabling shallow trench isolation for 0.1 μm technologies and beyond

✍ Chang, C.-P.; Shive, S.F.; Kuehne, S.C.; Ma, Y.; Vuong, H.; Baumann, F.H.; Bude, 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 257 KB

[Japan Soc. Appl. Phys 1999 Symposium on

[Japan Soc. Appl. Phys 1999 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (14-16 June 1999)] 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) - Aluminum word line and bit line fabrication technology for COB DRAM using a polysilicon-aluminum substitute

✍ Nakamura, S.; Suzuki, R.; Fukuda, M.; Kobayashi, M.; Hatada, A. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 168 KB

[Japan Soc. Appl. Phys 1999 Symposium on

[Japan Soc. Appl. Phys 1999 Symposium on VLSI Circuits. Digest of Technical Papers - Kyoto, Japan (17-19 June 1999)] 1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) - A multiple vendor 2.5-V DLL for 1.6-GB/s RDRAMs

✍ Portmann, C.; Chu, A.; Hays, N.; Sidiropoulos, S.; Stark, D.; Chau, P.; Donnelly 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 395 KB

[Japan Soc. Appl. Phys 1999 Symposium on

[Japan Soc. Appl. Phys 1999 Symposium on VLSI Circuits. Digest of Technical Papers - Kyoto, Japan (17-19 June 1999)] 1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326) - A 2.6-GHz/5.2-GHz frequency synthesizer in 0.4-μm CMOS technology

✍ Lam, C.; Razavi, B. 📂 Article 📅 1999 🏛 Japan Soc. Appl. Phys 🌐 Japanese ⚖ 473 KB