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[Japan Soc. Appl. Phys 1999 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (14-16 June 1999)] 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) - Aluminum word line and bit line fabrication technology for COB DRAM using a polysilicon-aluminum substitute

✍ Scribed by Nakamura, S.; Suzuki, R.; Fukuda, M.; Kobayashi, M.; Hatada, A.

Book ID: 126014826
Publisher: Japan Soc. Appl. Phys
Year: 1999
Tongue: Japanese
Weight: 168 KB
Category: Article
ISBN-13: 9784930813930
DOI: 10.1109/VLSIT.1999.799327

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