𝔖 Bobbio Scriptorium

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IVB-4 Characterization and two-dimensional simulation of impact ionization current in MOSFET's between 77 and 300 K

✍ Scribed by Henning, A.K.; Plummer, J.D.; Chan, N.

Book ID: 114595396
Publisher: IEEE
Year: 1985
Tongue: English
Weight: 165 KB
Volume: 32
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1985.22349

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