[IEEE [1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) - Nara, Japan (May 14-15, 1993)] [Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) - Two-dimensional Simulation Of GaAs MESFETs Including Impact Ionization Of Carriers And Carrier Trapping In The Semi-insulating Substrate

✍ Scribed by Horio, K.; Satoh, K.; Kusuki, H.

• Book ID: 118016067
• Publisher: IEEE
• Year: 1993
• Weight: 175 KB
• Volume: 0
• Category: Article
• ISBN-13: 9780780313385
• DOI: 10.1109/vpad.1993.724739