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A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides

✍ Scribed by Ahmed, K.; Wortman, J.J.; Hauser, J.R.


Book ID
114538337
Publisher
IEEE
Year
2000
Tongue
English
Weight
76 KB
Volume
47
Category
Article
ISSN
0018-9383

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