The continued growth in communications has increased the need for non-volatile memories. One particular approach is magnetoresistive random access memory (MRAM). Because there is no wear-out mechanism, read/write endurance is virtually unlimited, making the technology attractive for a variety of dif
✦ LIBER ✦
I–V characteristic and magnetoresistance of homogeneous materials
✍ Scribed by G.J. Papadopoulos
- Book ID
- 116669760
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 206 KB
- Volume
- 352
- Category
- Article
- ISSN
- 0022-3093
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