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ITON Schottky contacts for GaN based UV photodetectors

✍ Scribed by N. Vanhove; J. John; A. Lorenz; K. Cheng; G. Borghs; J.E.M. Haverkort

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
330 KB
Volume
253
Category
Article
ISSN
0169-4332

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Superior Characteristics of RuO2/GaN Sch
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✍ Shin, Sang-Hoon ;Jung, Byung-Kwon ;Lee, Jae-Hoon ;Lee, Myoung-Bok ;Lee, Jung-Hee πŸ“‚ Article πŸ“… 2001 πŸ› John Wiley and Sons 🌐 English βš– 88 KB

A RuO 2 /GaN Schottky diode was designed and fabricated for application as a UV photodetector. The fabricated RuO 2 /GaN Schottky diode showed a breakdown at over -50 V, plus a leakage current of 9 nA/cm 2 at -5 V with a good uniformity that was one order of magnitude lower than that of a Pt/GaN Sch