Superior Characteristics of RuO2/GaN Schottky-Type UV Photodetector

✍ Scribed by Shin, Sang-Hoon ;Jung, Byung-Kwon ;Lee, Jae-Hoon ;Lee, Myoung-Bok ;Lee, Jung-Hee ;Lee, Yong-Hyun ;Hahm, Sung-Ho

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 88 KB
• Volume: 188
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200111)188:1<341::aid-pssa341>3.0.co;2-0

✦ Synopsis

A RuO 2 /GaN Schottky diode was designed and fabricated for application as a UV photodetector. The fabricated RuO 2 /GaN Schottky diode showed a breakdown at over -50 V, plus a leakage current of 9 nA/cm 2 at -5 V with a good uniformity that was one order of magnitude lower than that of a Pt/GaN Schottky diode under the same epitaxial conditions. The proposed RuO 2 /GaN Schottky photodiode also exhibited a UV-visible rejection ratio of 3 Â 10 5 and responsivity of 0.23 A/W at 330 nm.