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Isotope study of far IR absorption of bistable centers in hydrogen-implanted silicon

✍ Scribed by Ainur T. Isova; Vasiliy V. Klimenov; Ivan S. Nevmerzhitsky; Mikhail A. Zakharov; Mukhtar A. Yeleuov; Serekbol Z. Tokmoldin

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
336 KB
Volume
404
Category
Article
ISSN
0921-4526

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We report results obtained from optical absorption studies carried out on amorphous silicon thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane plasma. The influence of the film thickness was studied on the two series of samples deposited from undiluted silane and