The possibility of making devices which use the high charge carrier mobility of Ge in mainstream semiconductor technology has drawn attention to the very limited understanding of ion implantation damage in germanium and the defect reactions associated with its removal. Results of DLTS and high-resol
โฆ LIBER โฆ
Comparative study of the plastic deformation- and implantation-induced centers in silicon
โ Scribed by N. Yarykin; E. Steinman
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 192 KB
- Volume
- 340-342
- Category
- Article
- ISSN
- 0921-4526
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## Abstract PST TiAl samples with a nominal composition of Ti~52~Al~48~ were deformed at room temperature with compression axis inclined to the lamellar interfaces by 45ยฐ and one of the side surface normal directions set to be ใ11$\bar{2}$ใ. The deformation structures on the free surfaces of the de