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[IRE 1987 International Electron Devices Meeting - ()] 1987 International Electron Devices Meeting - The impact of gate-induced drain leakage current on MOSFET scaling

✍ Scribed by Chan, T.Y.; Chen, J.; Ko, P.K.; Hu, C.

Book ID: 120251719
Publisher: IRE
Year: 1987
Weight: 338 KB
Category: Article
DOI: 10.1109/IEDM.1987.191531

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