✦ LIBER ✦

[IRE 1986 International Electron Devices Meeting - ()] 1986 International Electron Devices Meeting - The hetrojunction amorphous n+(a-Si)/n-i-p(a-SiC)/i-n+(a-Si) phototransistor with high gain (∼40) and high speed (∼10µs)

✍ Scribed by Chang, C.Y.; Chang, K.C.; Fang, Y.K.; Jwo, S.C.

No coin nor oath required. For personal study only.

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[IRE 1986 International Electron Devices Meeting - ()] 1986 International Electron Devices Meeting - The hetrojunction amorphous n+(a-Si)/n-i-p(a-SiC)/i-n+(a-Si) phototransistor with high gain (&#8764;40) and high speed (&#8764;10&#181;s)