✦ LIBER ✦

[IRE 1985 International Electron Devices Meeting - ()] 1985 International Electron Devices Meeting - Substrate current in N-channel and P-channel MOSFETs between 77K and 300K: Characterization and simulation

✍ Scribed by Henning, A.K.; Chan, N.; Plummer, J.D.

Book ID: 125512981
Publisher: IRE
Year: 1985
Weight: 320 KB
Category: Article
DOI: 10.1109/IEDM.1985.191036

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IRE 1985 International Electron Devices

[IRE 1985 International Electron Devices Meeting - ()] 1985 International Electron Devices Meeting - Low-temperature substrate current characterization of N-channel MOSFET's

✍ Lau, D.; Gildenblat, G.; Sodini, C.G.; Nelsen, D.E. 📂 Article 📅 1985 🏛 IRE ⚖ 315 KB

[IRE 1981 International Electron Devices

[IRE 1981 International Electron Devices Meeting - ()] 1981 International Electron Devices Meeting - A re-examination of practical scalability limits of n-channel and p-channel MOS devices for VLSI

✍ Shichijo, H. 📂 Article 📅 1981 🏛 IRE ⚖ 300 KB

[IRE 1985 International Electron Devices

[IRE 1985 International Electron Devices Meeting - ()] 1985 International Electron Devices Meeting - Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon

✍ del Alamo, J.; Swirhun, S.; Swanson, R.M. 📂 Article 📅 1985 🏛 IRE ⚖ 284 KB

[IEEE International Electron Devices Mee

[IEEE International Electron Devices Meeting 1991 [Technical Digest] - Washington, DC, USA (8-11 Dec. 1991)] International Electron Devices Meeting 1991 [Technical Digest] - High performance 0.25 mu m p-MOSFETs with silicon-germanium channels for 300 K and 77 K operation

✍ Kesan, V.P.; Subbana, S.; Restle, P.J.; Tejwani, M.J.; Aitken, J.M.; Iyer, S.S.; 📂 Article 📅 1991 🏛 IEEE ⚖ 301 KB

[IEEE 2010 IEEE International Electron D

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - Simulation study of the on-current improvements in Ge and sGe versus Si and sSi nano-MOSFETs

✍ Conzatti, F.; Toniutti, P.; Esseni, D.; Palestri, P.; Selmi, L. 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 179 KB

**Destined for greatness...tormented by demons. The epic story of Henry VIII’s transformation from a handsome, gifted youth to a murderous, cruel king.** Hal is a young man of extraordinary talents, astonishing warrior skills, sharp intelligence, and a fierce sense of honor and virtue. He believes