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IR and RBS spectroscopy investigation of semi-insulating phosphorus-doped polycrystalline silicon layers

✍ Scribed by Andrá, W. ;Götz, G. ;Hobert, H. ;Misyuchenko, V. ;Samuilov, V. A. ;Stelmakh, V.

Book ID
105380882
Publisher
John Wiley and Sons
Year
1988
Tongue
English
Weight
367 KB
Volume
110
Category
Article
ISSN
0031-8965

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The work presents the results of quantitative evaluation of Auger electron spectra utilizing the heights of Auger peaks normalized with respect to the background in N(E) vs. E distribution curves. The quantification method used was verified on a series of semi-insulating polycrystalline silicon samp