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Ionization rates and critical fields in 4H silicon carbide

✍ Scribed by Konstantinov, A. O.; Wahab, Q.; Nordell, N.; Lindefelt, U.


Book ID
127007166
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
325 KB
Volume
71
Category
Article
ISSN
0003-6951

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