✦ LIBER ✦

On the Mechanism of Ionization Processes in Silicon Carbide Occurring at High Electric Fields

✍ Scribed by I. K. Vereshchagin; A. S. Kirichuk

Publisher: John Wiley and Sons
Year: 1965
Tongue: English
Weight: 377 KB
Volume: 9
Category: Article
ISSN: 0370-1972
DOI: 10.1002/pssb.19650090324

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

On the conductivity of amorphous silicon

On the conductivity of amorphous silicon nitride in high electric fields

✍ Gritsenko, V. A. ;Meerson, E. E. ;Mogilnikov, K. P. ;Sinitsa, S. P. 📂 Article 📅 1977 🏛 John Wiley and Sons 🌐 English ⚖ 185 KB

The decrease in the hall angle and the s

The decrease in the hall angle and the sensitivity of silicon magnetic sensors at high electric fields

✍ P.J.A. Munter; S. Kordic 📂 Article 📅 1989 🏛 Elsevier Science ⚖ 792 KB

Effect of impact ionization on the satur

Effect of impact ionization on the saturated drift velocity of charge carriers in semiconductors at high electric field

✍ S.K. Roy; R. Ghosh 📂 Article 📅 1975 🏛 Elsevier Science 🌐 English ⚖ 279 KB

Influence of high-temperature heat treat

Influence of high-temperature heat treatment in vacuum on the electrical resistance of silicon-carbide heating elements

✍ V. I. Polyak; G. S. Rossikhina; V. L. Kalikhman; M. A. Solov'ev 📂 Article 📅 1988 🏛 Springer US 🌐 English ⚖ 282 KB

Electric birefringence of ionized polype

Electric birefringence of ionized polypeptides in solution and the effect of high electric fields on the helix-coil transition

✍ Koshiro Yoshioka; Kazuo Kikuchi; Mitsuo Fujimori 📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 790 KB

Influence of electron-electron scatterin

Influence of electron-electron scattering on the anisotropic conductivity at high electric fields in Si

✍ M. Asche; B. L. Boichenko; V. M. Bondar; O. G. Sarbei 📂 Article 📅 1971 🏛 John Wiley and Sons 🌐 English ⚖ 635 KB

## Abstract The conductivity and its anisotropy were investigated in dependence on the electric field strength in a wide range of impurity density for n‐Si at 77 °K. It is shown that the intervalley transfer of electron energy on account of electron‐electron interaction has to be included for carri