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Ionic doping effect in ZrO[sub 2] resistive switching memory

✍ Scribed by H. Zhang; B. Gao; B. Sun; G. Chen; L. Zeng; L. Liu; X. Liu; J. Lu; R. Han; J. Kang; B. Yu

Book ID: 121843425
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 648 KB
Volume: 96
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3364130

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