Ion beam synthesis of Si3N4 amorphous bu
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A.I. Belogorokhov; A.B. Danilin; V.N. Mordkovich; O.I. Vyletalina
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Article
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1992
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Elsevier Science
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English
โ 117 KB
It was demonstrated that it is possible to prevent the crystallization of buried Si3N 4 layers formed by N รท implantation with E--150 keV, โข ---5.0 ร 1017 N+cm 2 and TA = 1200 ยฐC (2 h). To achieve this, preliminary implantation with E = 150 keV and โข/> 5.0 x 1016 O + cm 2 has to be carried out. Radi