A simulation of ion beam sputtering for Si and Ge is carried out and the simulation results are compared with the experimental ones. By analyzing each process, the validity of the simulation is investigated. The simulation results include the sputtering yield, energy distribution, ejected angle dist
✦ LIBER ✦
Ion induced gelation of polymers investigated by Monte Carlo simulation
✍ Scribed by T. Kovács; G. Bárdos
- Book ID
- 113286925
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 267 KB
- Volume
- 107
- Category
- Article
- ISSN
- 0168-583X
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