Investigation of ion beam sputtering process by Monte Carlo simulation

✍ Scribed by Michio Mizutani; Kimihiro Sasaki; Tomonobu Hata

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 547 KB
• Volume: 81
• Category: Article
• ISSN: 8756-663X
• DOI: 10.1002/(sici)1520-6432(199812)81:12<41::aid-ecjb5>3.0.co;2-8

✦ Synopsis

A simulation of ion beam sputtering for Si and Ge is carried out and the simulation results are compared with the experimental ones. By analyzing each process, the validity of the simulation is investigated. The simulation results include the sputtering yield, energy distribution, ejected angle distribution, and surface recoiling Ar particles. When the flight distributions of the sputtered particles are derived from the distributions of the particles arriving at the substrate (numerical values) and the cumulative speed distributions (experimental values) as a function of the substrate location, both agree closely in the case of the Si target, while there is some deviation in the case of the Ge target. Further, the surface roughness is found to depend on the substrate location. This is attributed to differences in the energy of the arriving particles.