A simulation of ion beam sputtering for Si and Ge is carried out and the simulation results are compared with the experimental ones. By analyzing each process, the validity of the simulation is investigated. The simulation results include the sputtering yield, energy distribution, ejected angle dist
Simulation of relaxation processes by Monte Carlo
โ Scribed by Wilhelm Matthes
- Publisher
- Elsevier Science
- Year
- 1970
- Tongue
- English
- Weight
- 429 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0021-9991
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
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the effect of a single particle on macroscopic quantities is negligible, the background electromagnetic and flow fields This paper is concerned with the problem of transport in controlled nuclear fusion as it applies to confinement in a tokamak or and their profiles remain fixed. Collisions generate