A simulation of ion beam sputtering for Si and Ge is carried out and the simulation results are compared with the experimental ones. By analyzing each process, the validity of the simulation is investigated. The simulation results include the sputtering yield, energy distribution, ejected angle dist
β¦ LIBER β¦
Monte Carlo simulation of the mixing effect induced by ion beam implantation
β Scribed by S. Ido; A. Miyama; K. Ogata
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 415 KB
- Volume
- 66
- Category
- Article
- ISSN
- 0257-8972
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