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Ion channelling strain measurements in InGaAs/InP quantum well structures

✍ Scribed by J.M. Cole; L.G. Earwaker; A.G. Cullis; N.G. Chew; S.J. Bass; L.L. Taylor


Book ID
113278649
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
372 KB
Volume
24-25
Category
Article
ISSN
0168-583X

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The structural and compositional analysis of strain relaxed InGaAs/InP multi quantum wells (MQWs) have been carried out using high resolution X-ray diffraction (HRXRD), Raman spectroscopy (RS) and Rutherford backscattering spectrometry (RBS). The surface morphology has been investigated by atomic fo