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Analysis of InGaAs/InP multi-quantum-well structures by ion backscattering

✍ Scribed by H Leier; F Burgäzy; A Forchel; K Streubel; F Scholz; M Pilkuhn

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
403 KB
Volume
39
Category
Article
ISSN
0042-207X

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Structural and compositional analysis of
Structural and compositional analysis of strain relaxed InGaAs/InP multi quantum wells
✍ S. Dhamodaran; A.P. Pathak; A. Turos; R. Kesavamoorthy; B. Sundaravel; K.G.M. Na 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 622 KB

The structural and compositional analysis of strain relaxed InGaAs/InP multi quantum wells (MQWs) have been carried out using high resolution X-ray diffraction (HRXRD), Raman spectroscopy (RS) and Rutherford backscattering spectrometry (RBS). The surface morphology has been investigated by atomic fo