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Ion bombardment effects on the microcrystalline silicon growth mechanisms and structure

✍ Scribed by B. Kalache; A.I. Kosarev; R. Vanderhaghen; P. Roca i Cabarrocas

Book ID
117145460
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
183 KB
Volume
299-302
Category
Article
ISSN
0022-3093

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## Abstract The previously reported^1,2^ effect of low‐energy (several keV) ion bombardment on the surface topography of InP was investigated by scanning transmission electron microscopy. Convergent beam electron diffraction patterns of the surface growth β€˜cones’ induced by argon ion bombardment of