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Ion beam synthesized nanoclusters for silicon-based light emission

✍ Scribed by L Rebohle; J von Borany; H Fröb; T Gebel; M Helm; W Skorupa


Book ID
114165280
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
179 KB
Volume
188
Category
Article
ISSN
0168-583X

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We report on the fabrication and performances of extremely e cient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1:54 m electroluminescence (EL) at 300 K with a 10% external quantum e ciency, comparable to