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Ion beam synthesis of epitaxial CoSi2 layers and the redistribution of dopants within them

✍ Scribed by Karen J. Reeson; Russell S. Spraggs; Russell M. Gwilliam; Brian J. Sealy


Book ID
113283424
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
734 KB
Volume
68
Category
Article
ISSN
0168-583X

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An ion beam technique has been developed that allows the preparation of bevels from semiconducting heteroepitaxial structures with smooth surfaces and very shallow angles between 0.1Γ„ and 0.001Γ„. The bevels are used for AES depth proÐling of heterostructures by the line scan technique. Comparison of