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Ion beam synthesis of buried metallic and semiconducting silicides

✍ Scribed by S. Mantl


Book ID
113283513
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
339 KB
Volume
80-81
Category
Article
ISSN
0168-583X

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We fabricated continuous buried layers of the metallic a-FeSi 2 phase by high dose implantation of Fe + into ( 11 I ) silicon wafers and subsequent rapid thermal annealing at 1150 Β°C for 10 s. As determined from Rutherford backscattering spectrometry, these a-FeSi 2 layers have a stoichiometry of Fe