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Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges

✍ Scribed by S. Dhar; P. Schaaf; K.P. Lieb; N. Bibić; M. Milosavljević; T. Sajavaara; J. Keinonen; A. Traverse


Book ID
114166934
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
304 KB
Volume
205
Category
Article
ISSN
0168-583X

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Dedicated to Professor Dr. Wolfgang Schro È ter on the occasion of his 65th anniversary Thin Ta layers deposited on Si (100) substrates were irradiated with 475 keV Xe ions to fluences of (0.5±2) Â 10 16 ions/cm 2 at temperatures between room temperature and 400 C. By means of Rutherford Backscatter